The Yu Lab’s research interests include nanoscale materials, devices and their applications in future electronics, energy technologies and biomedical science. Our research focuses on rational design and synthesis of highly complex nanostructures with precisely controlled chemical composition, structural morphology and physical dimension; fundamental investigation of new chemical, optical, electronic and magnetic properties; and exploration of new technological opportunities arising in these nanoscale materials. A strong emphasis is placed on the hetero-integration of multi-composition, multi-structure and multi-function at the nanoscale, and by doing so, creating a new generation of integrated nanosystems with unprecedented performance or unique functions to break the boundaries of traditional technologies.
Education
(Ph.D.) in SAINT, Sungkyunkwan Univ., Suwon, Korea (2011)
(B.S.) in Electronic, Electrical and Computer Engineering, Sungkyunkwan Univ., Suwon, Korea (2007)
Experience
Professor of School of ICE, Sungkyunkwan University, Suwon, Korea(2013 - present)
Postdoctoral researcher, UCLA, CA, USA (2011-2013)
Journal Articles
(2023)
Highly Efficient Van Der Waals Heterojunction on Graphdiyne toward the High-Performance Photodetector.
ADVANCED SCIENCE.
10,
25
(2023)
Multi-neuron connection using multi-terminal floating–gate memristor for unsupervised learning.
NATURE COMMUNICATIONS.
14,
1
(2023)
A Polymorphic Memtransistor with Tunable Metallic and Semiconducting Channel.
ADVANCED MATERIALS.
35,
15
(2022)
CNT-molecule-CNT (1D-0D-1D) van der Waals integration ferroelectric memory with 1-nm(2) junction area.
NATURE COMMUNICATIONS.
13,
1
(2022)
Synthesis of a Selectively Nb-Doped WS2-MoS2 Lateral Heterostructure for a High-Detectivity PN Photodiode.
ACS NANO.
16,
8
(2021)
One-Step Synthesis of NbSe2/Nb-Doped-WSe2 Metal/Doped-Semiconductor van der Waals Heterostructures for Doping Controlled Ohmic Contact.
ACS NANO.
15,
8
(2021)
Infrared Proximity Sensors Based on Photo-Induced Tunneling in van der Waals Integration.
ADVANCED FUNCTIONAL MATERIALS.
31,
31
(2021)
In-sensor reservoir computing for language learning via two-dimensional memristors.
SCIENCE ADVANCES.
7,
20
(2021)
Selective Pattern Growth of Atomically Thin MoSe2 Films via a Surface-Mediated Liquid-Phase Promoter.
ACS APPLIED MATERIALS & INTERFACES.
13,
15
(2021)
Ideal PN photodiode using doping controlled WSe2-MoSe2 lateral heterostructure.
JOURNAL OF MATERIALS CHEMISTRY C.
9,
10
(2020)
A Non-Volatile Memory Based on NbOx/NbSe2 Van der Waals Heterostructures.
APPLIED SCIENCES-BASEL.
10,
21
(2020)
Li Intercalation Effects on Interface Resistances of High-Speed and Low-Power WSe(2)Field-Effect Transistors.
ADVANCED FUNCTIONAL MATERIALS.
30,
45
(2020)
Tuning the inhomogeneous charge transport in ZnO interfaces for ultrahigh on/off ratio top-gated field-effect-transistor arrays.
NANO RESEARCH.
13,
11
(2020)
Photoinduced Tuning of Schottky Barrier Height in Graphene/MoS2 Heterojunction for Ultrahigh Performance Short Channel Phototransistor.
ACS NANO.
14,
6
(2020)
Ultra-high current gain tunneling hot-electron transfer amplifier based on vertical van der Waals heterojunctions (vol 51, pg 841, 2020).
NANO RESEARCH.
13,
8
(2020)
Unveiling the Hot Carrier Distribution in Vertical Graphene/h-BN/Au van der Waals Heterostructures for High-Performance Photodetector.
ACS APPLIED MATERIALS & INTERFACES.
12,
9
(2020)
CVD-Grown Carbon Nanotube Branches on Black Silicon Stems for Ultrahigh Absorbance in Wide Wavelength Range.
SCIENTIFIC REPORTS.
10,
1
(2020)
Schottky Barrier Variable Graphene/Multilayer-MoS2 Heterojunction Transistor Used to Overcome Short Channel Effects.
ACS APPLIED MATERIALS & INTERFACES.
12,
2
(2019)
Tailoring Quantum Tunneling in a Vanadium-Doped WSe2/SnSe2 Heterostructure.
ADVANCED SCIENCE.
7,
3
Patent/Intellectual Property
멀티터미널 플로팅게이트 메모리, 멤리스터 및 이를 이용한 뉴런소자 시스템.
10-2019-0085759.
20201222.
KOREA, REPUBLIC OF
쇼트키장벽 변화 기반 스트레인 센서.
10-2018-0156006.
20200806.
KOREA, REPUBLIC OF
수직형 터널링 랜덤 액세스 메모리.
10-2017-0169634.
20200428.
UNITED STATES
black silicon 위의 CNT성장과 적용.
10-2017-0069102.
20200424.
KOREA, REPUBLIC OF
이차원물질을 포함하는 반도체소자 및 그 제조방법.
15/825,388.
20200107.
UNITED STATES
광 검출 장치.
10-2016-0107108.
20181126.
KOREA, REPUBLIC OF
수직형 터널링 랜덤 액세스 메모리.
10-2017-0169634.
20181105.
KOREA, REPUBLIC OF
Conference Paper
(2019)
Two-terminal floating-gate Memristors with can der Walls heterostructures for ultra high on/off ratio.
Memrisys 2019.
GERMANY
(2019)
High performance graphene photodetector with van der Waals heterostructure through tuning carrier tunneling.
NANO KOREA 2019.
KOREA, REPUBLIC OF
(2019)
Highly sensitive graphene biosensor by monomolecular self-assembly of receptors on graphene surface.
NANO KOREA 2019.
KOREA, REPUBLIC OF
(2019)
Self-gating diode using graphene as an electrode reach to ideality factor.
NANO KOREA 2019.
KOREA, REPUBLIC OF
(2019)
Ultrahigh Gauge Factor in Graphene/MoS2 Heterojunction Field Effect Transistor with Variable Schottky Barrier.
Graphene 2019.
ITALY
(2017)
Short channel Field-Effect Transistor based on graphene electrodes with low short-channel effect.
GRAPHENE WEEK.
GREECE
(2017)
van der Waals Heterostructures for Transistor, Photodetector and memristor.
ICANS 27.
KOREA, REPUBLIC OF
(2017)
High quality photodetector using vertically stacked heterostructure Graphene/h-BN/Silicon.
Nano Korea 2017.
KOREA, REPUBLIC OF
(2017)
van der Waals heterostructure devices.
물리학회.
KOREA, REPUBLIC OF
(2016)
수직형 WSe2, MoS2 트랜지스터.
한국재료학회 추계학술대회.
KOREA, REPUBLIC OF
(2015)
Graphene Biosensor using Self-assembling Protein.
한국재료학회 추계학술대회.
KOREA, REPUBLIC OF
